| Main Objectives: | |
| o develop growth processes on GaAs and InP based substrates with improved material properties and a better control of the quantum dot growth process. | |
| o use in nano-engineering degrees of freedom provided by quantum dots to realise dedicated zero dimensional structures for key laser applications. | |
| o develop and demonstrate key devices for telecom applications based on specific superior quantum dot material properties. | |
| o explore and demonstrate novel dielectric properties in quantum dot materials. |